SI4403CDY-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 13.4A 8SO
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V
| Anzahl | Preis |
|---|---|
| 2500+ | 0.46 EUR |
| 5000+ | 0.42 EUR |
| 7500+ | 0.41 EUR |
| 12500+ | 0.38 EUR |
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Technische Details SI4403CDY-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 20V 13.4A 8SO, Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 8 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 5W (Tc), Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V.
Weitere Produktangebote SI4403CDY-T1-GE3 nach Preis ab 0.49 EUR bis 1.9 EUR
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SI4403CDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -13.4A; Idm: -40A Case: SO8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Technology: TrenchFET® Polarisation: unipolar Pulsed drain current: -40A Drain-source voltage: -20V Drain current: -13.4A Gate charge: 90nC On-state resistance: 25mΩ Power dissipation: 5W Gate-source voltage: ±8V |
auf Bestellung 2097 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4403CDY-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 13.4A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V |
auf Bestellung 15918 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4403CDY-T1-GE3 | Vishay Semiconductors |
MOSFETs 1.8V P-Channel |
auf Bestellung 40323 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4403CDY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -13.4A; Idm: -40A
Case: SO8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Pulsed drain current: -40A
Drain-source voltage: -20V
Drain current: -13.4A
Gate charge: 90nC
On-state resistance: 25mΩ
Power dissipation: 5W
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -13.4A; Idm: -40A
Case: SO8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Pulsed drain current: -40A
Drain-source voltage: -20V
Drain current: -13.4A
Gate charge: 90nC
On-state resistance: 25mΩ
Power dissipation: 5W
Gate-source voltage: ±8V
auf Bestellung 2097 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 82+ | 0.87 EUR |
| 120+ | 0.6 EUR |
| 140+ | 0.51 EUR |
| SI4403CDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 13.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V
Description: MOSFET P-CH 20V 13.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V
auf Bestellung 15918 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.78 EUR |
| 16+ | 1.12 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.52 EUR |
| SI4403CDY-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 1.8V P-Channel
MOSFETs 1.8V P-Channel
auf Bestellung 40323 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 1.9 EUR |
| 10+ | 1.19 EUR |
| 100+ | 0.78 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.55 EUR |
| 2500+ | 0.49 EUR |