auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 616+ | 0.26 EUR |
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Technische Details SI4403DDY-T1-GE3 Vishay
Description: MOSFET P-CH 20V 15.4A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15.4A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V, Power Dissipation (Max): 5W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 10 V.
Weitere Produktangebote SI4403DDY-T1-GE3 nach Preis ab 0.26 EUR bis 1.09 EUR
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SI4403DDY-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 20V 15.4A 8-Pin SOIC N T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4403DDY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 15.4A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15.4A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 10 V |
auf Bestellung 8940 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4403DDY-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -12.3A; 3.2W; SO8 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -12.3A On-state resistance: 14mΩ Type of transistor: P-MOSFET Power dissipation: 3.2W Polarisation: unipolar Gate charge: 39nC Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: SO8 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4403DDY-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -12.3A; 3.2W; SO8 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -12.3A On-state resistance: 14mΩ Type of transistor: P-MOSFET Power dissipation: 3.2W Polarisation: unipolar Gate charge: 39nC Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: SO8 |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4403DDY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 15.4A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15.4A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 10 V |
auf Bestellung 9907 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4403DDY-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET -20V Vds 8V Vgs SO-8 |
auf Bestellung 153 Stücke: Lieferzeit 14-28 Tag (e) |