SI4431BDY-T1-GE3

SI4431BDY-T1-GE3

Hersteller: Vishay
Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R
si4431bd.pdf
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Technische Details SI4431BDY-T1-GE3

Description: MOSFET P-CH 30V 5.7A 8SO, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).

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SI4431BDY-T1-GE3
SI4431BDY-T1-GE3
Hersteller: Vishay / Siliconix
MOSFET 30V 7.5A 2.5W 30mohm @ 10V
si4431bd-1765539.pdf
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SI4431BDY-T1-GE3
SI4431BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5.7A 8SO
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
si4431bd.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen