SI4431BDY-T1-GE3 Vishay / Siliconix
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.08 EUR |
| 10+ | 1.7 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 0.92 EUR |
| 2500+ | 0.84 EUR |
| 5000+ | 0.81 EUR |
Produktrezensionen
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Technische Details SI4431BDY-T1-GE3 Vishay / Siliconix
Description: MOSFET P-CH 30V 5.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V.
Weitere Produktangebote SI4431BDY-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SI4431BDY-T1-GE3 | Vishay Siliconix |
 Description: MOSFET P-CH 30V 5.7A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SI4431BDY-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 5.7A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
SI4431BDY-T1-GE3 | VISHAY |
Description: VISHAY - SI4431BDY-T1-GE3 - P CH MOSFET Transistormontage: Surface Mount Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 5.7 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - Unlimited Verlustleistung Pd: 1.5 Bauform - Transistor: SOIC Anzahl der Pins: 8 Produktpalette: - Wandlerpolarität: P Channel Betriebswiderstand, Rds(on): 0.023 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 3 SVHC: No SVHC (19-Jan-2021) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
SI4431BDY-T1-GE3 | Vishay |
Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SI4431BDY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Description: MOSFET P-CH 30V 5.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI4431BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Description: MOSFET P-CH 30V 5.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI4431BDY-T1-GE3 |
|
Hersteller: VISHAY
Description: VISHAY - SI4431BDY-T1-GE3 - P CH MOSFET
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 5.7
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - Unlimited
Verlustleistung Pd: 1.5
Bauform - Transistor: SOIC
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: P Channel
Betriebswiderstand, Rds(on): 0.023
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 3
SVHC: No SVHC (19-Jan-2021)
Description: VISHAY - SI4431BDY-T1-GE3 - P CH MOSFET
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 5.7
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - Unlimited
Verlustleistung Pd: 1.5
Bauform - Transistor: SOIC
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: P Channel
Betriebswiderstand, Rds(on): 0.023
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 3
SVHC: No SVHC (19-Jan-2021)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI4431BDY-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R
Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH