SI4447DY-T1-E3

SI4447DY-T1-E3

SI4447DY-T1-E3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 3.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 15V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 15V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)

73662.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 29 Stücke
Lieferzeit 21-28 Tag (e)

13+ 2.11 EUR
15+ 1.85 EUR

Technische Details SI4447DY-T1-E3

Description: MOSFET P-CH 40V 3.3A 8-SOIC, Package / Case: 8-SOIC (0.154", 3.90mm Width), Supplier Device Package: 8-SO, Vgs (Max): ±16V, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 15V, Drive Voltage (Max Rds On, Min Rds On): 15V, 10V, Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 1.1W (Ta), Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V, Drain to Source Voltage (Vdss): 40V, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $).

Preis SI4447DY-T1-E3 ab 1.85 EUR bis 2.11 EUR

SI4447DY-T1-E3
Hersteller:

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SI4447DY-T1-E3
SI4447DY-T1-E3
Hersteller: Vishay
Trans MOSFET P-CH 40V 3.3A 8-Pin SOIC N T/R
73662.pdf
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SI4447DYT1E3
Hersteller: VISHAY

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SI4447DYT1E3
Hersteller:

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SI4447DY-T1-E3
SI4447DY-T1-E3
Hersteller: Vishay Semiconductors
MOSFET 40V 4.5A 2.0W 54mohm @ 10V
SILXS12580_1-2566185.pdf
auf Bestellung 470 Stücke
Lieferzeit 14-28 Tag (e)
SI4447DY-T1-E3
SI4447DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 3.3A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 15V
Drive Voltage (Max Rds On, Min Rds On): 15V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
73662.pdf
auf Bestellung 14258 Stücke
Lieferzeit 21-28 Tag (e)
SI4447DY-T1-E3
SI4447DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 3.3A 8SO
Drive Voltage (Max Rds On, Min Rds On): 15V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 15V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
73662.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen