SI4447DY-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 3.3A 8SO
Drive Voltage (Max Rds On, Min Rds On): 15V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 15V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4447DY-T1-E3 Vishay Siliconix
Description: MOSFET P-CH 40V 3.3A 8SO, Drive Voltage (Max Rds On, Min Rds On): 15V, 10V, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 1.1W (Ta), Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 15V, Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±16V.
Weitere Produktangebote SI4447DY-T1-E3 nach Preis ab 0.47 EUR bis 1.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SI4447DY-T1-E3 | Vishay Semiconductors |
MOSFET 40V 4.5A 2.0W 54mohm @ 10V |
auf Bestellung 5340 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
SI4447DY-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 3.3A 8SO Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 15V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 15V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V |
auf Bestellung 4930 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| SI4447DY-T1-E3 |
|
auf Bestellung 94000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| SI4447DYT1E3 | VISHAY |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI4447DY-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFET 40V 4.5A 2.0W 54mohm @ 10V
MOSFET 40V 4.5A 2.0W 54mohm @ 10V
auf Bestellung 5340 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.31 EUR |
| 10+ | 1.13 EUR |
| 100+ | 0.78 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.56 EUR |
| 2500+ | 0.49 EUR |
| 5000+ | 0.47 EUR |
| SI4447DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 3.3A 8SO
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 15V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 15V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Description: MOSFET P-CH 40V 3.3A 8SO
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 15V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 15V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
auf Bestellung 4930 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 1.32 EUR |
| 16+ | 1.13 EUR |
| 100+ | 0.78 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.56 EUR |
| SI4447DY-T1-E3 |
|
auf Bestellung 94000 Stücke:
Lieferzeit 21-28 Tag (e)
| SI4447DYT1E3 |
Hersteller: VISHAY
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)