SI4459BDY-T1-GE3

SI4459BDY-T1-GE3

Hersteller: Vishay
Trans MOSFET P-CH 30V 20.5A 8-Pin SOIC N T/R
si4459bdy.pdf si4459bdy.pdf
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Technische Details SI4459BDY-T1-GE3

Description: MOSFET P-CHAN 30V SO-8, Package / Case: 8-SOIC (0.154", 3.90mm Width), Supplier Device Package: 8-SO, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 15V, Vgs (Max): +20V, -16V, Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 27.8A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Base Part Number: SI4459.

Preis SI4459BDY-T1-GE3 ab 0 EUR bis 0 EUR

SI4459BDY-T1-GE3
SI4459BDY-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET -30V Vds 16V Vgs SO-8
si4459bdy-1766827.pdf
auf Bestellung 24997 Stücke
Lieferzeit 14-28 Tag (e)
SI4459BDY-T1-GE3
SI4459BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHAN 30V SO-8
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 27.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4459
si4459bdy.pdf
auf Bestellung 2217 Stücke
Lieferzeit 21-28 Tag (e)
SI4459BDY-T1-GE3
SI4459BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 20.5A/27.8A 8SO
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 27.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
si4459bdy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4459BDY-T1-GE3
SI4459BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 20.5A/27.8A 8SO
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 27.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 15 V
si4459bdy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen