SI4459BDY-T1-GE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 2+ | 2.41 EUR |
| 10+ | 1.65 EUR |
| 100+ | 1.11 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.8 EUR |
| 2500+ | 0.78 EUR |
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Technische Details SI4459BDY-T1-GE3 Vishay Semiconductors
Description: MOSFET P-CH 30V 20.5A/27.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 27.8A (Tc), Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V, Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 15 V.
Weitere Produktangebote SI4459BDY-T1-GE3 nach Preis ab 0.97 EUR bis 3.12 EUR
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SI4459BDY-T1-GE3 | Vishay Siliconix |
 Description: MOSFET P-CH 30V 20.5A/27.8A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 27.8A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 15 V |
auf Bestellung 1391 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4459BDY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 20.5A/27.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 27.8A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 15 V
Description: MOSFET P-CH 30V 20.5A/27.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 27.8A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 15 V
auf Bestellung 1391 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.12 EUR |
| 10+ | 1.99 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.97 EUR |