SI4501BDY-T1-GE3

SI4501BDY-T1-GE3

Hersteller: Vishay
Trans MOSFET N/P-CH 30V/8V 9A/6.4A 8-Pin SOIC N T/R
si4501bd.pdf si4501bd.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 173 Stücke
Lieferzeit 14-21 Tag (e)
164+ 1.01 EUR

Technische Details SI4501BDY-T1-GE3

Description: MOSFET N/P-CH 30V/8V 8SOIC, Base Part Number: SI4501, Supplier Device Package: 8-SOIC, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 15V, Power - Max: 4.5W, 3.1W, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A, 8A, Drain to Source Voltage (Vdss): 30V, 8V, FET Feature: Logic Level Gate, FET Type: N and P-Channel, Common Drain, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $).

Preis SI4501BDY-T1-GE3 ab 1.01 EUR bis 1.01 EUR

SI4501BDY-T1-GE3
SI4501BDY-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET -8V Vds 8V Vgs SO-8 N&P PAIR
VISH_S_A0002474096_1-2568185.pdf
auf Bestellung 9998 Stücke
Lieferzeit 14-28 Tag (e)
SI4501BDY-T1-GE3
Hersteller: Vishay
Trans MOSFET N/P-CH 30V/8V 9A/6.4A 8-Pin SOIC N T/R
si4501bd.pdf si4501bd.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4501BDY-T1-GE3
SI4501BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V/8V 8SOIC
Base Part Number: SI4501
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 15V
Power - Max: 4.5W, 3.1W
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A, 8A
Drain to Source Voltage (Vdss): 30V, 8V
FET Feature: Logic Level Gate
FET Type: N and P-Channel, Common Drain
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
si4501bd.pdf
auf Bestellung 3315 Stücke
Lieferzeit 21-28 Tag (e)
SI4501BDY-T1-GE3
SI4501BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V/8V 8SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.5W, 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A, 8A
Manufacturer: Vishay Siliconix
Drain to Source Voltage (Vdss): 30V, 8V
FET Feature: Logic Level Gate
FET Type: N and P-Channel, Common Drain
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI4501
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
si4501bd.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4501BDY-T1-GE3
SI4501BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V/8V 8SOIC
Base Part Number: SI4501
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.5W, 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A, 8A
Drain to Source Voltage (Vdss): 30V, 8V
FET Feature: Logic Level Gate
FET Type: N and P-Channel, Common Drain
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
si4501bd.pdf
auf Bestellung 1719 Stücke
Lieferzeit 21-28 Tag (e)