SI4501BDY-T1-GE3 Vishay Siliconix

Description: MOSFET N/P-CH 30V/8V 12A 8SOIC, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 12A, 8A, Drain to Source Voltage (Vdss): 30V, 8V, Power - Max: 4.5W, 3.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Common Drain, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).