SI4630DY-T1-E3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 137 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 137 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SI4630DY-T1-E3
Description: MOSFET N-CH 25V 40A 8-SOIC, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Drain to Source Voltage (Vdss): 25V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Base Part Number: SI4630, Package / Case: 8-SOIC (0.154", 3.90mm Width), Supplier Device Package: 8-SO, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 6670pF @ 15V, Vgs (Max): ±16V, Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.
Preis SI4630DY-T1-E3 ab 4.37 EUR bis 6.01 EUR
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SI4630DYT1E3 Hersteller: |
35000 Stücke |
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SI4630DY-T1-E3 Hersteller: VISHAY 
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98000 Stücke |
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SI4630DYT1E3 Hersteller: VISHAY |
35000 Stücke |
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SI4630DY-T1-E3 Hersteller:
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87520 Stücke |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 25V 40A 8-SOIC Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Package / Case: 8-SOIC (0.154", 3.90mm Width) Base Part Number: SI4630 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SO Mounting Type: Surface Mount Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 25V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 6670pF @ 15V Vgs (Max): ±16V Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA
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auf Bestellung 10000 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 25V 40A 8-SOIC Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 25V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI4630 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6670pF @ 15V Vgs (Max): ±16V Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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auf Bestellung 11109 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 25V 40A 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 25V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Base Part Number: SI4630 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6670pF @ 15V Vgs (Max): ±16V Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
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auf Bestellung 11109 Stücke Lieferzeit 21-28 Tag (e) |
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