SI4630DY-T1-E3

SI4630DY-T1-E3

SI4630DY-T1-E3

Hersteller: Vishay Semiconductors
MOSFET 25V Vds 16V Vgs SO-8
73685-1766160.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 137 Stücke
Lieferzeit 14-28 Tag (e)
9+ 6.01 EUR
10+ 5.43 EUR
25+ 5.12 EUR
100+ 4.37 EUR

Technische Details SI4630DY-T1-E3

Description: MOSFET N-CH 25V 40A 8-SOIC, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Drain to Source Voltage (Vdss): 25V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Base Part Number: SI4630, Package / Case: 8-SOIC (0.154", 3.90mm Width), Supplier Device Package: 8-SO, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 6670pF @ 15V, Vgs (Max): ±16V, Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.

Preis SI4630DY-T1-E3 ab 4.37 EUR bis 6.01 EUR

SI4630DYT1E3
Hersteller:

35000 Stücke
SI4630DY-T1-E3
Hersteller: VISHAY

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SI4630DYT1E3
Hersteller: VISHAY

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SI4630DY-T1-E3
Hersteller:

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SI4630DY-T1-E3
SI4630DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 40A 8-SOIC
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4630
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6670pF @ 15V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
73685.pdf
auf Bestellung 10000 Stücke
Lieferzeit 21-28 Tag (e)
SI4630DY-T1-E3
SI4630DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 40A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4630
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6670pF @ 15V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
73685.pdf
auf Bestellung 11109 Stücke
Lieferzeit 21-28 Tag (e)
SI4630DY-T1-E3
SI4630DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 40A 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI4630
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6670pF @ 15V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
73685.pdf
auf Bestellung 11109 Stücke
Lieferzeit 21-28 Tag (e)