SI4646DY-T1-GE3

SI4646DY-T1-GE3

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Technische Details SI4646DY-T1-GE3

Description: MOSFET N-CH 30V 12A 8SOIC, Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V, Supplier Device Package: 8-SO, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 6.25W, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Drain to Source Voltage (Vdss): 30V, FET Type: MOSFET N-Channel, Metal Oxide.

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SI4646DY-T1-GE3
SI4646DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.25W
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
si4646dy.pdf
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