SI4778DY-T1-GE3

SI4778DY-T1-GE3

Hersteller:

si4778dy.pdf si4778dy.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
798200 Stücke

Technische Details SI4778DY-T1-GE3

Description: MOSFET N-CH 25V 8A 8-SOIC, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Part Status: Obsolete, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, Vgs (Max): ±16V, Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V, Power Dissipation (Max): 2.4W (Ta), 5W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: 8-SO, Package / Case: 8-SOIC (0.154", 3.90mm Width).

Preis SI4778DY-T1-GE3 ab 0 EUR bis 0 EUR

SI4778DY-T1-GE3
SI4778DY-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET RECOMMENDED ALT 781-SI4134DY-T1-GE3
si4778dy-1765330.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4778DY-T1-GE3
SI4778DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 8A 8-SOIC
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
si4778dy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4778DY-T1-GE3
SI4778DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 8A 8-SOIC
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
si4778dy.pdf
auf Bestellung 2 Stücke
Lieferzeit 21-28 Tag (e)
SI4778DY-T1-GE3
SI4778DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 8A 8-SOIC
Packaging: Cut Tape (CT)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
si4778dy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen