auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4816BDY-T1-E3 Vishay
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, 1.25W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A, Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote SI4816BDY-T1-E3 nach Preis ab 0.89 EUR bis 3.82 EUR
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SI4816BDY-T1-E3 | Hersteller : Vishay |
 Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4816BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R |
auf Bestellung 9700 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4816BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W, 1.25W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 1332 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4816BDY-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET 30V Vds 20V Vgs SO-8 |
auf Bestellung 17385 Stücke: Lieferzeit 14-28 Tag (e) |
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SI4816BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4816BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4816BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4816BDY-T1-E3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2 + Schottky; LITTLE FOOT®; unipolar; 30V Polarisation: unipolar Kind of package: reel; tape Case: SO8 Features of semiconductor devices: Half-Bridge Power MOSFET Gate charge: 10/18nC Technology: LITTLE FOOT® Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±20V Type of transistor: N-MOSFET x2 + Schottky Power dissipation: 0.64/0.8W On-state resistance: 18.5/11.5mΩ Drain current: 4.6/6.5A Drain-source voltage: 30V Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SI4816BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W, 1.25W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
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SI4816BDY-T1-E3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2 + Schottky; LITTLE FOOT®; unipolar; 30V Polarisation: unipolar Kind of package: reel; tape Case: SO8 Features of semiconductor devices: Half-Bridge Power MOSFET Gate charge: 10/18nC Technology: LITTLE FOOT® Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±20V Type of transistor: N-MOSFET x2 + Schottky Power dissipation: 0.64/0.8W On-state resistance: 18.5/11.5mΩ Drain current: 4.6/6.5A Drain-source voltage: 30V |
Produkt ist nicht verfügbar |