SI4816BDY-T1-E3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 1+ | 3.75 EUR |
| 10+ | 2.39 EUR |
| 100+ | 1.65 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.22 EUR |
| 2500+ | 1.13 EUR |
| 5000+ | 1.12 EUR |
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Technische Details SI4816BDY-T1-E3 Vishay Semiconductors
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V, Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1W, 1.25W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote SI4816BDY-T1-E3 nach Preis ab 1.28 EUR bis 3.98 EUR
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SI4816BDY-T1-E3 | Vishay Siliconix |
 Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOICPart Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A Drain to Source Voltage (Vdss): 30V Power - Max: 1W, 1.25W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 2148 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4816BDY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W, 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W, 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2148 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.98 EUR |
| 10+ | 2.52 EUR |
| 100+ | 1.74 EUR |
| 500+ | 1.39 EUR |
| 1000+ | 1.28 EUR |