SI4816BDY-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W, 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 1255 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 3.8 EUR |
| 10+ | 3.15 EUR |
| 100+ | 2.51 EUR |
| 500+ | 2.12 EUR |
| 1000+ | 1.8 EUR |
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Technische Details SI4816BDY-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, 1.25W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A, Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote SI4816BDY-T1-GE3 nach Preis ab 1.76 EUR bis 3.82 EUR
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SI4816BDY-T1-GE3 | Hersteller : Vishay Semiconductors |
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SI4816BDY-T1-GE3 | Hersteller : Vishay |
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| SI4816BDY-T1-GE3 | Hersteller : Siliconix |
2xN-MOSFET 30V 5.8A SI4816BDY-T1-E3TR SI4816BDY-T1-GE3TR TSI4816bdy Anzahl je Verpackung: 10 Stücke |
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SI4816BDY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4816BDY-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2 + Schottky; LITTLE FOOT®; unipolar; 30V Case: SO8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 4.6/6.5A On-state resistance: 18.5/11.5mΩ Type of transistor: N-MOSFET x2 + Schottky Power dissipation: 0.64/0.8W Polarisation: unipolar Features of semiconductor devices: Half-Bridge Power MOSFET Gate charge: 10/18nC Technology: LITTLE FOOT® Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SI4816BDY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W, 1.25W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
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SI4816BDY-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2 + Schottky; LITTLE FOOT®; unipolar; 30V Case: SO8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 4.6/6.5A On-state resistance: 18.5/11.5mΩ Type of transistor: N-MOSFET x2 + Schottky Power dissipation: 0.64/0.8W Polarisation: unipolar Features of semiconductor devices: Half-Bridge Power MOSFET Gate charge: 10/18nC Technology: LITTLE FOOT® Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |