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SI4816BDY-T1-GE3

SI4816BDY-T1-GE3 Vishay


si4816bd.pdf Hersteller: Vishay
Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R
auf Bestellung 2500 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2500+1.07 EUR
Mindestbestellmenge: 2500
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Technische Details SI4816BDY-T1-GE3 Vishay

Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, 1.25W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A, Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.

Weitere Produktangebote SI4816BDY-T1-GE3 nach Preis ab 1.5 EUR bis 3.82 EUR

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SI4816BDY-T1-GE3 SI4816BDY-T1-GE3 Hersteller : Vishay si4816bd.pdf Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2500+1.5 EUR
Mindestbestellmenge: 2500
SI4816BDY-T1-GE3 SI4816BDY-T1-GE3 Hersteller : Vishay Siliconix si4816bd.pdf Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W, 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 1255 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.57 EUR
100+ 2.12 EUR
500+ 1.79 EUR
1000+ 1.52 EUR
Mindestbestellmenge: 7
SI4816BDY-T1-GE3 SI4816BDY-T1-GE3 Hersteller : Vishay Semiconductors si4816bd.pdf MOSFET 30V Vds 20V Vgs SO-8
auf Bestellung 15202 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.82 EUR
17+ 3.2 EUR
100+ 2.54 EUR
250+ 2.33 EUR
500+ 2.12 EUR
1000+ 1.81 EUR
2500+ 1.67 EUR
Mindestbestellmenge: 14
SI4816BDY-T1-GE3 SI4816BDY-T1-GE3 Hersteller : Vishay si4816bd.pdf Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
SI4816BDY-T1-GE3 Hersteller : Siliconix si4816bd.pdf 2xN-MOSFET 30V 5.8A SI4816BDY-T1-E3TR SI4816BDY-T1-GE3TR TSI4816bdy
Anzahl je Verpackung: 10 Stücke
auf Bestellung 54 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+2.25 EUR
Mindestbestellmenge: 20
SI4816BDY-T1-GE3 SI4816BDY-T1-GE3 Hersteller : Vishay si4816bd.pdf Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R
Produkt ist nicht verfügbar
SI4816BDY-T1-GE3 SI4816BDY-T1-GE3 Hersteller : VISHAY SI4816BDY.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; LITTLE FOOT®; unipolar; 30V
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Features of semiconductor devices: Half-Bridge Power MOSFET
Gate charge: 10/18nC
Technology: LITTLE FOOT®
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2 + Schottky
Power dissipation: 0.64/0.8W
On-state resistance: 18.5/11.5mΩ
Drain current: 4.6/6.5A
Drain-source voltage: 30V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
SI4816BDY-T1-GE3 SI4816BDY-T1-GE3 Hersteller : Vishay Siliconix si4816bd.pdf Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W, 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
SI4816BDY-T1-GE3 SI4816BDY-T1-GE3 Hersteller : VISHAY SI4816BDY.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; LITTLE FOOT®; unipolar; 30V
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Features of semiconductor devices: Half-Bridge Power MOSFET
Gate charge: 10/18nC
Technology: LITTLE FOOT®
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2 + Schottky
Power dissipation: 0.64/0.8W
On-state resistance: 18.5/11.5mΩ
Drain current: 4.6/6.5A
Drain-source voltage: 30V
Produkt ist nicht verfügbar