SI4816BDY-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W, 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
| Anzahl | Preis |
|---|---|
| 2500+ | 1.16 EUR |
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Technische Details SI4816BDY-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, 1.25W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A, Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote SI4816BDY-T1-GE3 nach Preis ab 1.04 EUR bis 3.98 EUR
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SI4816BDY-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 30V Vds 20V Vgs SO-8 |
auf Bestellung 12410 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4816BDY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A Drain to Source Voltage (Vdss): 30V Power - Max: 1W, 1.25W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 3390 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4816BDY-T1-GE3 | Hersteller : Siliconix |
2xN-MOSFET 30V 5.8A SI4816BDY-T1-E3TR SI4816BDY-T1-GE3TR TSI4816bdy Anzahl je Verpackung: 10 Stücke |
auf Bestellung 54 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4816BDY-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2 + Schottky; LITTLE FOOT®; unipolar; 30V Type of transistor: N-MOSFET x2 + Schottky Technology: LITTLE FOOT® Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.6/6.5A Power dissipation: 0.64/0.8W Case: SO8 Gate-source voltage: ±20V On-state resistance: 18.5/11.5mΩ Mounting: SMD Gate charge: 10/18nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Half-Bridge Power MOSFET |
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