| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.2 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
2500 Stücke
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Produktbewertung abgeben
Technische Details SI4816BDY-T1-GE3 Vishay
Description: VISHAY - SI4816BDY-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 5.8 A, 5.8 A, 0.0155 ohm, tariffCode: 85412900, euEccn: NLR, rohsCompliant: Y-EX, Dauer-Drainstrom Id, p-Kanal: 5.8A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 30V, MSL: MSL 1 - unbegrenzt, Dauer-Drainstrom Id, n-Kanal: 5.8A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.0155ohm, Verlustleistung, p-Kanal: 1.25W, Drain-Source-Spannung Vds, n-Kanal: 30V, SVHC: No SVHC (04-Feb-2026), Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0155ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal + Schottky, Verlustleistung, n-Kanal: 1.25W, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote SI4816BDY-T1-GE3 nach Preis ab 1.21 EUR bis 4.74 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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SI4816BDY-T1-GE3 | Vishay |
 Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4816BDY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W, 1.25W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4816BDY-T1-GE3 | Vishay |
Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R |
auf Bestellung 205 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4816BDY-T1-GE3 | Vishay Semiconductors |
MOSFETs 30V Vds 20V Vgs SO-8 |
auf Bestellung 189 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4816BDY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W, 1.25W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 3390 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4816BDY-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R
Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.21 EUR |
| SI4816BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W, 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W, 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.38 EUR |
| SI4816BDY-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R
Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 162+ | 1.81 EUR |
| SI4816BDY-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 30V Vds 20V Vgs SO-8
MOSFETs 30V Vds 20V Vgs SO-8
auf Bestellung 189 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.66 EUR |
| 10+ | 2.68 EUR |
| 100+ | 2.05 EUR |
| 500+ | 1.71 EUR |
| 1000+ | 1.59 EUR |
| 2500+ | 1.37 EUR |
| SI4816BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W, 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W, 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 3390 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.74 EUR |
| 10+ | 3 EUR |
| 100+ | 2.07 EUR |
| 500+ | 1.65 EUR |
| 1000+ | 1.52 EUR |