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Technische Details SI4816BDY-T1-GE3 Vishay
Description: VISHAY - SI4816BDY-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 5.8 A, 5.8 A, 0.0155 ohm, tariffCode: 85412900, rohsCompliant: Y-EX, Dauer-Drainstrom Id, p-Kanal: 5.8A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 30V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 5.8A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.0155ohm, Verlustleistung, p-Kanal: 1.25W, Drain-Source-Spannung Vds, n-Kanal: 30V, euEccn: NLR, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0155ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal + Schottky, Verlustleistung, n-Kanal: 1.25W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (21-Jan-2025).
Weitere Produktangebote SI4816BDY-T1-GE3 nach Preis ab 1.18 EUR bis 4.74 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI4816BDY-T1-GE3 | Vishay |
 Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4816BDY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W, 1.25W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4816BDY-T1-GE3 | Vishay |
Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R |
auf Bestellung 205 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4816BDY-T1-GE3 | Vishay Semiconductors |
MOSFETs 30V Vds 20V Vgs SO-8 |
auf Bestellung 12410 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4816BDY-T1-GE3 | VISHAY |
Description: VISHAY - SI4816BDY-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 5.8 A, 5.8 A, 0.0155 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: 5.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 5.8A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0155ohm Verlustleistung, p-Kanal: 1.25W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0155ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal + Schottky Verlustleistung, n-Kanal: 1.25W Betriebstemperatur, max.: 150°C SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 1531 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4816BDY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A Drain to Source Voltage (Vdss): 30V Power - Max: 1W, 1.25W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 3390 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4816BDY-T1-GE3 | Siliconix |
2xN-MOSFET 30V 5.8A SI4816BDY-T1-E3TR SI4816BDY-T1-GE3TR TSI4816bdy Anzahl je Verpackung: 10 Stücke |
auf Bestellung 54 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI4816BDY-T1-GE3 |
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Hersteller: Vishay
Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R
Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.18 EUR |
| SI4816BDY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W, 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W, 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.38 EUR |
| SI4816BDY-T1-GE3 |
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Hersteller: Vishay
Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R
Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 162+ | 1.77 EUR |
| SI4816BDY-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs 30V Vds 20V Vgs SO-8
MOSFETs 30V Vds 20V Vgs SO-8
auf Bestellung 12410 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.27 EUR |
| 10+ | 2.76 EUR |
| 100+ | 1.87 EUR |
| 500+ | 1.49 EUR |
| 1000+ | 1.39 EUR |
| 2500+ | 1.25 EUR |
| 5000+ | 1.24 EUR |
| SI4816BDY-T1-GE3 |
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Hersteller: VISHAY
Description: VISHAY - SI4816BDY-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 5.8 A, 5.8 A, 0.0155 ohm
tariffCode: 85412900
rohsCompliant: Y-EX
Dauer-Drainstrom Id, p-Kanal: 5.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 5.8A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0155ohm
Verlustleistung, p-Kanal: 1.25W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0155ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal + Schottky
Verlustleistung, n-Kanal: 1.25W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (21-Jan-2025)
Description: VISHAY - SI4816BDY-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 5.8 A, 5.8 A, 0.0155 ohm
tariffCode: 85412900
rohsCompliant: Y-EX
Dauer-Drainstrom Id, p-Kanal: 5.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 5.8A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0155ohm
Verlustleistung, p-Kanal: 1.25W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0155ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal + Schottky
Verlustleistung, n-Kanal: 1.25W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (21-Jan-2025)
auf Bestellung 1531 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 56+ | 4.5 EUR |
| 80+ | 2.9 EUR |
| 102+ | 2.12 EUR |
| 500+ | 1.69 EUR |
| 1000+ | 1.62 EUR |
| SI4816BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W, 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W, 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 3390 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.74 EUR |
| 10+ | 3 EUR |
| 100+ | 2.07 EUR |
| 500+ | 1.65 EUR |
| 1000+ | 1.52 EUR |
| SI4816BDY-T1-GE3 |
|
Hersteller: Siliconix
2xN-MOSFET 30V 5.8A SI4816BDY-T1-E3TR SI4816BDY-T1-GE3TR TSI4816bdy
Anzahl je Verpackung: 10 Stücke
2xN-MOSFET 30V 5.8A SI4816BDY-T1-E3TR SI4816BDY-T1-GE3TR TSI4816bdy
Anzahl je Verpackung: 10 Stücke
auf Bestellung 54 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 2.3 EUR |