SI4850EY-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 60V 6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.84 EUR |
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Technische Details SI4850EY-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 60V 6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V, Power Dissipation (Max): 1.7W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V.
Weitere Produktangebote SI4850EY-T1-GE3 nach Preis ab 1.79 EUR bis 4.08 EUR
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SI4850EY-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 60V Vds 20V Vgs SO-8 |
auf Bestellung 9235 Stücke: Lieferzeit 14-28 Tag (e) |
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SI4850EY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 6A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V |
auf Bestellung 4962 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4850EY-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI4850EY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 6 A, 0.018 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 6A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 3.3W Bauform - Transistor: SOIC Anzahl der Pins: 8Pins productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.018ohm |
auf Bestellung 6351 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4850EY-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI4850EY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 6 A, 0.018 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 6A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 3.3W Bauform - Transistor: SOIC Anzahl der Pins: 8Pins productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.018ohm |
auf Bestellung 6351 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4850EY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4850EY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4850EY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 40A; 1.2W; SO8 Polarisation: unipolar Kind of package: reel; tape Case: SO8 Gate charge: 27nC Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±20V Pulsed drain current: 40A Type of transistor: N-MOSFET Power dissipation: 1.2W On-state resistance: 22mΩ Drain current: 6A Drain-source voltage: 60V Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SI4850EY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 40A; 1.2W; SO8 Polarisation: unipolar Kind of package: reel; tape Case: SO8 Gate charge: 27nC Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±20V Pulsed drain current: 40A Type of transistor: N-MOSFET Power dissipation: 1.2W On-state resistance: 22mΩ Drain current: 6A Drain-source voltage: 60V |
Produkt ist nicht verfügbar |