auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.64 EUR |
Produktrezensionen
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Technische Details SI4909DY-T1-GE3 Vishay
Description: MOSFET 2P-CH 40V 8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.2W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V, Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote SI4909DY-T1-GE3 nach Preis ab 0.64 EUR bis 2.42 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI4909DY-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 40V 6.4A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4909DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 40V 8A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4909DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 40V 8A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 20144 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4909DY-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET -40V Vds 20V Vgs SO-8 |
auf Bestellung 10570 Stücke: Lieferzeit 14-28 Tag (e) |
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SI4909DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 40V 6.4A 8-Pin SOIC N T/R |
auf Bestellung 134 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4909DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 40V 6.4A 8-Pin SOIC N T/R |
auf Bestellung 134 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4909DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 40V 6.4A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4909DY-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -6.4A; Idm: -30A; 2.1W; SO8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Pulsed drain current: -30A Case: SO8 Drain-source voltage: -40V Drain current: -6.4A On-state resistance: 27mΩ Type of transistor: P-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 63nC Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SI4909DY-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -6.4A; Idm: -30A; 2.1W; SO8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Pulsed drain current: -30A Case: SO8 Drain-source voltage: -40V Drain current: -6.4A On-state resistance: 27mΩ Type of transistor: P-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 63nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |