SI4909DY-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 40V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
| Anzahl | Preis |
|---|---|
| 2500+ | 0.69 EUR |
| 5000+ | 0.64 EUR |
| 7500+ | 0.61 EUR |
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Technische Details SI4909DY-T1-GE3 Vishay Siliconix
Description: MOSFET 2P-CH 40V 8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.2W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V, Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote SI4909DY-T1-GE3 nach Preis ab 0.7 EUR bis 2.64 EUR
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SI4909DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 40V 8A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 12233 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4909DY-T1-GE3 | Vishay Semiconductors |
MOSFETs -40V Vds 20V Vgs SO-8 |
auf Bestellung 334 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI4909DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 40V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2P-CH 40V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 12233 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.55 EUR |
| 11+ | 1.61 EUR |
| 100+ | 1.07 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.77 EUR |
| SI4909DY-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs -40V Vds 20V Vgs SO-8
MOSFETs -40V Vds 20V Vgs SO-8
auf Bestellung 334 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.64 EUR |
| 10+ | 1.66 EUR |
| 100+ | 1.09 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.77 EUR |
| 2500+ | 0.7 EUR |