SI4922BDY-T1-E3
SI4922BDY-T1-E3
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 30V 8A 8-SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.8V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 8 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8 Stücke
Lieferzeit 21-28 Tag (e)
Technische Details SI4922BDY-T1-E3
Description: MOSFET 2N-CH 30V 8A 8-SOIC, Current - Continuous Drain (Id) @ 25°C: 8A, Drain to Source Voltage (Vdss): 30V, FET Feature: Standard, FET Type: 2 N-Channel (Dual), Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Base Part Number: SI4922, Supplier Device Package: 8-SO, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 3.1W, Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V.
Preis SI4922BDY-T1-E3 ab 3.09 EUR bis 4.21 EUR
 Hersteller: Vishay Semiconductors MOSFET DUAL N-CH 30V(D-S)
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auf Bestellung 371 Stücke Lieferzeit 14-28 Tag (e) |
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SI4922BDYT1E3 Hersteller: |
37500 Stücke |
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SI4922BDYT1E3 Hersteller: VISHAY |
37500 Stücke |
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Si4922BDY-T1-E3 Hersteller:
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60000 Stücke |
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SI4922BDY-T1-E3 Hersteller: Vishay Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SI4922BDY-T1-E3 Hersteller: Vishay Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R
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auf Bestellung 40 Stücke Lieferzeit 14-21 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET 2N-CH 30V 8A 8-SOIC Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1.8V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Dual) Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Part Status: Active
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: Vishay Siliconix Description: MOSFET 2N-CH 30V 8A 8-SOIC Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 30V FET Feature: Standard FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI4922 Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.1W Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
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auf Bestellung 18572 Stücke Lieferzeit 21-28 Tag (e) |
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