SI4922BDY-T1-E3

SI4922BDY-T1-E3

SI4922BDY-T1-E3

Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8-SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.8V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)

si4922bd.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 8 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4.08 EUR

Technische Details SI4922BDY-T1-E3

Description: MOSFET 2N-CH 30V 8A 8-SOIC, Current - Continuous Drain (Id) @ 25°C: 8A, Drain to Source Voltage (Vdss): 30V, FET Feature: Standard, FET Type: 2 N-Channel (Dual), Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Base Part Number: SI4922, Supplier Device Package: 8-SO, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 3.1W, Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V.

Preis SI4922BDY-T1-E3 ab 3.09 EUR bis 4.21 EUR

SI4922BDY-T1-E3
SI4922BDY-T1-E3
Hersteller: Vishay Semiconductors
MOSFET DUAL N-CH 30V(D-S)
si4922bd-1766165.pdf
auf Bestellung 371 Stücke
Lieferzeit 14-28 Tag (e)
13+ 4.21 EUR
14+ 3.77 EUR
25+ 3.72 EUR
100+ 3.09 EUR
SI4922BDYT1E3
Hersteller:

37500 Stücke
SI4922BDYT1E3
Hersteller: VISHAY

37500 Stücke
Si4922BDY-T1-E3
Hersteller:

si4922bd.pdf si4922bd.pdf
60000 Stücke
SI4922BDY-T1-E3
Hersteller: Vishay
Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R
si4922bd.pdf si4922bd.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4922BDY-T1-E3
Hersteller: Vishay
Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R
si4922bd.pdf si4922bd.pdf
auf Bestellung 40 Stücke
Lieferzeit 14-21 Tag (e)
SI4922BDY-T1-E3
SI4922BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8-SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.8V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
si4922bd.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4922BDY-T1-E3
SI4922BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4922
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
si4922bd.pdf
auf Bestellung 18572 Stücke
Lieferzeit 21-28 Tag (e)