SI4932DY-T1-GE3

SI4932DY-T1-GE3

SI4932DY-T1-GE3

Hersteller: Vishay Semiconductors
MOSFET 30V 8.0A 3.2W 15mohm @ 10V
si4932dy-1765642.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 6 Stücke
Lieferzeit 14-28 Tag (e)
14+ 3.72 EUR
16+ 3.33 EUR
100+ 2.57 EUR
500+ 2.13 EUR

Technische Details SI4932DY-T1-GE3

Description: MOSFET 2N-CH 30V 8A 8-SOIC, Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 8A, Drain to Source Voltage (Vdss): 30V, FET Type: 2 N-Channel (Dual), Power - Max: 3.2W, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V.

Preis SI4932DY-T1-GE3 ab 2.13 EUR bis 3.72 EUR

SI4932DY-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R
si4932dy.pdf si4932dy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4932DY-T1-GE3
SI4932DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8-SOIC
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
si4932dy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4932DY-T1-GE3
SI4932DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.2W
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 15 mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
si4932dy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4932DY-T1-GE3
SI4932DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8-SOIC
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
si4932dy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen