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SI4932DY-T1-GE3 Vishay Siliconix


si4932dy.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.06 EUR
5000+0.99 EUR
7500+0.95 EUR
12500+0.92 EUR
Mindestbestellmenge: 2500 Stücke
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Technische Details SI4932DY-T1-GE3 Vishay Siliconix

Description: MOSFET 2N-CH 30V 8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V, Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.

Weitere Produktangebote SI4932DY-T1-GE3 nach Preis ab 1.06 EUR bis 3.75 EUR

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SI4932DY-T1-GE3 SI4932DY-T1-GE3 Vishay Semiconductors si4932dy.pdf MOSFETs 30V 8.0A 3.2W 15mohm @ 10V
auf Bestellung 21722 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.75 EUR
10+2.39 EUR
100+1.62 EUR
500+1.29 EUR
1000+1.18 EUR
2500+1.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SI4932DY-T1-GE3 SI4932DY-T1-GE3 Vishay Siliconix si4932dy.pdf Description: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 13586 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.75 EUR
10+2.39 EUR
100+1.62 EUR
500+1.29 EUR
1000+1.18 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4932DY-T1-GE3 si4932dy.pdf
Hersteller: Vishay Semiconductors
MOSFETs 30V 8.0A 3.2W 15mohm @ 10V
auf Bestellung 21722 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+3.75 EUR
10+2.39 EUR
100+1.62 EUR
500+1.29 EUR
1000+1.18 EUR
2500+1.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SI4932DY-T1-GE3 si4932dy.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 13586 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.75 EUR
10+2.39 EUR
100+1.62 EUR
500+1.29 EUR
1000+1.18 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH