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SI4932DY-T1-GE3

SI4932DY-T1-GE3 Vishay Semiconductors


si4932dy.pdf Hersteller: Vishay Semiconductors
MOSFETs 30V 8.0A 3.2W 15mohm @ 10V
auf Bestellung 22500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.38 EUR
10+1.81 EUR
100+1.33 EUR
500+1.05 EUR
1000+0.96 EUR
2500+0.89 EUR
5000+0.86 EUR
Mindestbestellmenge: 2
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Technische Details SI4932DY-T1-GE3 Vishay Semiconductors

Description: MOSFET 2N-CH 30V 8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V, Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.

Weitere Produktangebote SI4932DY-T1-GE3 nach Preis ab 0.99 EUR bis 3.17 EUR

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SI4932DY-T1-GE3 SI4932DY-T1-GE3 Hersteller : Vishay Siliconix si4932dy.pdf Description: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 1118 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.17 EUR
10+2.02 EUR
100+1.36 EUR
500+1.08 EUR
1000+0.99 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
SI4932DY-T1-GE3 SI4932DY-T1-GE3 Hersteller : Vishay si4932dy.pdf Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R
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SI4932DY-T1-GE3 SI4932DY-T1-GE3 Hersteller : Vishay si4932dy.pdf Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R
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SI4932DY-T1-GE3 Hersteller : VISHAY si4932dy.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 30A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
Case: SO8
Drain-source voltage: 30V
Drain current: 8A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 48nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4932DY-T1-GE3 SI4932DY-T1-GE3 Hersteller : Vishay Siliconix si4932dy.pdf Description: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4932DY-T1-GE3 Hersteller : VISHAY si4932dy.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 30A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
Case: SO8
Drain-source voltage: 30V
Drain current: 8A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 48nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH