SI5441BDC-T1-GE3

SI5441BDC-T1-GE3

SI5441BDC-T1-GE3

Hersteller: Vishay Semiconductors
MOSFET 20V 6.1A 2.5W 45mohm @ 4.5V
VISH_S_A0001469043_1-2567422.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 3000 Stücke
Lieferzeit 14-28 Tag (e)
21+ 2.56 EUR
24+ 2.19 EUR
100+ 1.8 EUR
250+ 1.78 EUR

Technische Details SI5441BDC-T1-GE3

Description: MOSFET P-CH 20V 4.4A 1206-8, Vgs (Max): ±12V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), Drain to Source Voltage (Vdss): 20V, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Supplier Device Package: 1206-8 ChipFET™, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 1.3W (Ta).

Preis SI5441BDC-T1-GE3 ab 1.78 EUR bis 2.56 EUR

SI5441BDC-T1-GE3
SI5441BDC-T1-GE3
Hersteller: Vishay
Trans MOSFET P-CH 20V 4.4A 8-Pin Chip FET T/R
73207.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5441BDC-T1-GE3
SI5441BDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.4A 1206-8
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
73207.pdf
auf Bestellung 2995 Stücke
Lieferzeit 21-28 Tag (e)
SI5441BDC-T1-GE3
SI5441BDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.4A 1206-8
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
73207.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen