SI5441BDC-T1-GE3 Vishay Semiconductors
auf Bestellung 13056 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.59 EUR |
| 10+ | 1.3 EUR |
| 100+ | 1.01 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.7 EUR |
| 24000+ | 0.68 EUR |
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Technische Details SI5441BDC-T1-GE3 Vishay Semiconductors
Description: MOSFET P-CH 20V 4.4A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 1206-8 ChipFET™, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V.
Weitere Produktangebote SI5441BDC-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI5441BDC-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 20V 4.4A 8-Pin Chip FET T/R |
Produkt ist nicht verfügbar |
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SI5441BDC-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 4.4A 8-Pin Chip FET T/R |
Produkt ist nicht verfügbar |
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SI5441BDC-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 4.4A 1206-8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 1206-8 ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V |
Produkt ist nicht verfügbar |
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SI5441BDC-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 4.4A 1206-8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 1206-8 ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V |
Produkt ist nicht verfügbar |
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| SI5441BDC-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.1A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -6.1A Pulsed drain current: -20A Power dissipation: 2.5W Case: PowerPAK® ChipFET Gate-source voltage: ±12V On-state resistance: 80mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |