SI5475BDC-T1-E3

SI5475BDC-T1-E3

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Technische Details SI5475BDC-T1-E3

Description: MOSFET P-CH 12V 6A 1206-8, Supplier Device Package: 1206-8 ChipFET™, Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 6.3W, Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, Gate Charge (Qg) (Max) @ Vgs: 40nC @ 8V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Drain to Source Voltage (Vdss): 12V, Vgs(th) (Max) @ Id: 1V @ 250µA, Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.6A, 4.5V, FET Type: MOSFET P-Channel, Metal Oxide.

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SI5475BDC-T1-E3
SI5475BDC-T1-E3
Hersteller: Vishay
Trans MOSFET P-CH 12V 7.7A 8-Pin Chip FET T/R
si5475bd.pdf
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SI5475BDC-T1-E3
SI5475BDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 6A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.3W
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 8V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 12V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.6A, 4.5V
FET Type: MOSFET P-Channel, Metal Oxide
si5475bd.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen