SI5476DU-T1-E3

SI5476DU-T1-E3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 12A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET N-Channel, Metal Oxide
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V

73663.pdf
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Technische Details SI5476DU-T1-E3

Description: MOSFET N-CH 60V 12A PPAK CHIPFET, Supplier Device Package: PowerPAK® ChipFet Single, Package / Case: PowerPAK® ChipFET™ Single, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 31W, Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Drain to Source Voltage (Vdss): 60V, FET Type: MOSFET N-Channel, Metal Oxide, Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V.

Preis SI5476DU-T1-E3 ab 0 EUR bis 0 EUR

SI5476DU-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 12A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 10V
73663.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5476DU-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 12A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET N-Channel, Metal Oxide
Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
73663.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen