SI5515CDC-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N/P-CH 20V 4A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 1206-8 ChipFET™
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.73 EUR |
| 6000+ | 0.69 EUR |
| 9000+ | 0.64 EUR |
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Technische Details SI5515CDC-T1-GE3 Vishay Siliconix
Description: MOSFET N/P-CH 20V 4A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V, Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: 1206-8 ChipFET™.
Weitere Produktangebote SI5515CDC-T1-GE3 nach Preis ab 0.72 EUR bis 1.92 EUR
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SI5515CDC-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET -20V Vds 8V Vgs 1206-8 ChipFET |
auf Bestellung 47970 Stücke: Lieferzeit 14-28 Tag (e) |
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SI5515CDC-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 20V 4A 1206-8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: 1206-8 ChipFET™ |
auf Bestellung 13955 Stücke: Lieferzeit 21-28 Tag (e) |
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SI5515CDC-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N/P-CH 20V 4A/3.1A 8-Pin Chip FET T/R |
Produkt ist nicht verfügbar |
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| SI5515CDC-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4/-4A; 3.1W Mounting: SMD Type of transistor: N/P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape On-state resistance: 156/50mΩ Power dissipation: 3.1W Gate charge: 11/11.3nC Polarisation: unipolar Technology: TrenchFET® Drain current: 4/-4A Kind of channel: enhanced Drain-source voltage: 20/-20V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI5515CDC-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4/-4A; 3.1W Mounting: SMD Type of transistor: N/P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape On-state resistance: 156/50mΩ Power dissipation: 3.1W Gate charge: 11/11.3nC Polarisation: unipolar Technology: TrenchFET® Drain current: 4/-4A Kind of channel: enhanced Drain-source voltage: 20/-20V |
Produkt ist nicht verfügbar |