SI5913DC-T1-GE3

SI5913DC-T1-GE3

SI5913DC-T1-GE3

Hersteller: Vishay / Siliconix
MOSFET 20V 4.0A 3.1W 84mohm @ 10V
si5913dc-279745.pdf
verfügbar/auf Bestellung
auf Bestellung 2992 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SI5913DC-T1-GE3

Description: MOSFET P-CH 20V 4A 1206-8, Rds On (Max) @ Id, Vgs: 84 mOhm @ 3.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Drain to Source Voltage (Vdss): 20V, FET Feature: Schottky Diode (Isolated), FET Type: MOSFET P-Channel, Metal Oxide, Supplier Device Package: 1206-8 ChipFET™, Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 3.1W, Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA.

Preis SI5913DC-T1-GE3 ab 0 EUR bis 0 EUR

SI5913DC-T1-GE3
SI5913DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4A 1206-8
Rds On (Max) @ Id, Vgs: 84 mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
si5913dc.pdf
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SI5913DC-T1-GE3
SI5913DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 84 mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
si5913dc.pdf
auf Bestellung 624 Stücke
Lieferzeit 21-28 Tag (e)
SI5913DC-T1-GE3
SI5913DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4A 1206-8
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 84 mOhm @ 3.7A, 10V
si5913dc.pdf
auf Bestellung 624 Stücke
Lieferzeit 21-28 Tag (e)