SI5913DC-T1-GE3 Vishay / Siliconix

Description: MOSFET P-CH 20V 4A 1206-8, Packaging: Cut Tape (CT), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 84mOhm @ 3.7A, 10V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.7W (Ta), 3.1W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 1206-8 ChipFET™, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V.