SI6433BDQ-T1-GE3

SI6433BDQ-T1-GE3

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Technische Details SI6433BDQ-T1-GE3

Description: MOSFET P-CH 12V 4A 8-TSSOP, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 1.05W, Supplier Device Package: 8-TSSOP, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Drain to Source Voltage (Vdss): 12V, FET Type: MOSFET P-Channel, Metal Oxide.

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SI6433BDQ-T1-GE3
SI6433BDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4A 8-TSSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.05W
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
72511.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6433BDQ-T1-GE3
SI6433BDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4A 8-TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.05W
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
72511.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6433BDQ-T1-GE3
SI6433BDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4A 8-TSSOP
Power - Max: 1.05W
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
72511.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen