SI6433BDQ-T1-GE3
SI6433BDQ-T1-GE3
Hersteller:
verfügbar/auf Bestellung
138000 Stücke
138000 Stücke
Technische Details SI6433BDQ-T1-GE3
Description: MOSFET P-CH 12V 4A 8-TSSOP, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 1.05W, Supplier Device Package: 8-TSSOP, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Drain to Source Voltage (Vdss): 12V, FET Type: MOSFET P-Channel, Metal Oxide.
Preis SI6433BDQ-T1-GE3 ab 0 EUR bis 0 EUR
 Hersteller: Vishay Siliconix Description: MOSFET P-CH 12V 4A 8-TSSOP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.05W Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drain to Source Voltage (Vdss): 12V FET Type: MOSFET P-Channel, Metal Oxide
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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Hersteller: Vishay Siliconix Description: MOSFET P-CH 12V 4A 8-TSSOP Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.05W Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drain to Source Voltage (Vdss): 12V FET Type: MOSFET P-Channel, Metal Oxide
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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Hersteller: Vishay Siliconix Description: MOSFET P-CH 12V 4A 8-TSSOP Power - Max: 1.05W Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width) Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drain to Source Voltage (Vdss): 12V FET Type: MOSFET P-Channel, Metal Oxide
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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