SI6562CDQ-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6.7A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W, 1.7W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.7A, 6.1A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP
Description: MOSFET N/P-CH 20V 6.7A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W, 1.7W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.7A, 6.1A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.64 EUR |
6000+ | 0.61 EUR |
9000+ | 0.58 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI6562CDQ-T1-GE3 Vishay Siliconix
Description: VISHAY - SI6562CDQ-T1-GE3 - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 6.7 A, 6.7 A, 0.18 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 6.7A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 20V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 6.7A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.18ohm, Verlustleistung, p-Kanal: 1.6W, Drain-Source-Spannung Vds, n-Kanal: 20V, euEccn: NLR, Bauform - Transistor: TSSOP, Anzahl der Pins: 8Pins, Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.18ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: Komplementärer n- und p-Kanal, Verlustleistung, n-Kanal: 1.6W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (23-Jan-2024).
Weitere Produktangebote SI6562CDQ-T1-GE3 nach Preis ab 0.68 EUR bis 1.6 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
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SI6562CDQ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 20V 6.7A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W, 1.7W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.7A, 6.1A Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-TSSOP |
auf Bestellung 18888 Stücke: Lieferzeit 10-14 Tag (e) |
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SI6562CDQ-T1-GE3 | Hersteller : Vishay Semiconductors | MOSFET -20V Vds 12V Vgs TSSOP-8 N&P PAIR |
auf Bestellung 24774 Stücke: Lieferzeit 10-14 Tag (e) |
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SI6562CDQ-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI6562CDQ-T1-GE3 - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 6.7 A, 6.7 A, 0.18 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 6.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 6.7A Drain-Source-Durchgangswiderstand, p-Kanal: 0.18ohm Verlustleistung, p-Kanal: 1.6W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: TSSOP Anzahl der Pins: 8Pins Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.18ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 1.6W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 17924 Stücke: Lieferzeit 14-21 Tag (e) |
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SI6562CDQ-T1-GE3 | Hersteller : Vishay | Trans MOSFET N/P-CH 20V 5.7A/5.1A 8-Pin TSSOP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI6562CDQ-T1-GE3 | Hersteller : Vishay | Trans MOSFET N/P-CH 20V 5.7A/5.1A 8-Pin TSSOP T/R |
Produkt ist nicht verfügbar |
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SI6562CDQ-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4.2/-4.9A Power dissipation: 1/1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 23/51nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 30A Mounting: SMD Case: TSSOP8 Drain-source voltage: 20/-20V Drain current: 4.2/-4.9A On-state resistance: 22/30mΩ Type of transistor: N/P-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI6562CDQ-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4.2/-4.9A Power dissipation: 1/1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 23/51nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 30A Mounting: SMD Case: TSSOP8 Drain-source voltage: 20/-20V Drain current: 4.2/-4.9A On-state resistance: 22/30mΩ Type of transistor: N/P-MOSFET |
Produkt ist nicht verfügbar |