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SI6562CDQ-T1-GE3 Vishay Siliconix


si6562cd.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6.7A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W, 1.7W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.7A, 6.1A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.62 EUR
6000+0.58 EUR
9000+0.56 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SI6562CDQ-T1-GE3 Vishay Siliconix

Description: MOSFET N/P-CH 20V 6.7A 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.6W, 1.7W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6.7A, 6.1A, Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-TSSOP.

Weitere Produktangebote SI6562CDQ-T1-GE3 nach Preis ab 0.71 EUR bis 2.52 EUR

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SI6562CDQ-T1-GE3 SI6562CDQ-T1-GE3 Vishay Siliconix si6562cd.pdf Description: MOSFET N/P-CH 20V 6.7A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W, 1.7W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.7A, 6.1A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP
auf Bestellung 34187 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.34 EUR
12+1.48 EUR
100+0.99 EUR
500+0.78 EUR
1000+0.71 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI6562CDQ-T1-GE3 SI6562CDQ-T1-GE3 Vishay Semiconductors si6562cd.pdf MOSFETs -20V Vds 12V Vgs TSSOP-8 N&P PAIR
auf Bestellung 7357 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.52 EUR
10+1.59 EUR
100+1.06 EUR
500+0.94 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI6562CDQ-T1-GE3 si6562cd.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6.7A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W, 1.7W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.7A, 6.1A
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP
auf Bestellung 34187 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.34 EUR
12+1.48 EUR
100+0.99 EUR
500+0.78 EUR
1000+0.71 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI6562CDQ-T1-GE3 si6562cd.pdf
Hersteller: Vishay Semiconductors
MOSFETs -20V Vds 12V Vgs TSSOP-8 N&P PAIR
auf Bestellung 7357 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.52 EUR
10+1.59 EUR
100+1.06 EUR
500+0.94 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH