auf Bestellung 1580 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 68+ | 2.31 EUR |
| 100+ | 2.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI7113DN-T1-E3 Vishay
Description: MOSFET P-CH 100V 13.2A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc), Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V.
Weitere Produktangebote SI7113DN-T1-E3 nach Preis ab 1.55 EUR bis 6.73 EUR
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SI7113DN-T1-E3 | Hersteller : Vishay |
 Trans MOSFET P-CH 100V 3.5A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7113DN-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 100V 13.2A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc) Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V |
auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7113DN-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 3.5A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 2340 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7113DN-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 3.5A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 2340 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7113DN-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 100V 13.2A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc) Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V |
auf Bestellung 17112 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7113DN-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET -100V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 105913 Stücke: Lieferzeit 14-28 Tag (e) |
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SI7113DN-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 3.5A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI7113DN-T1-E3 | Hersteller : VISHAY |
09+ SOP |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI7113DN-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -13.2A; 52W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -13.2A Pulsed drain current: -20A Power dissipation: 52W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7113DN-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -13.2A; 52W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -13.2A Pulsed drain current: -20A Power dissipation: 52W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |