SI7113DN-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 100V 13.2A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.98 EUR |
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Technische Details SI7113DN-T1-E3 Vishay Siliconix
Description: MOSFET P-CH 100V 13.2A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc), Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V.
Weitere Produktangebote SI7113DN-T1-E3 nach Preis ab 1.47 EUR bis 6.07 EUR
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SI7113DN-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 3.5A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 1580 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7113DN-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 3.5A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7113DN-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 3.5A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 2340 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7113DN-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 3.5A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 2340 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7113DN-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs -100V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 94769 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7113DN-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 100V 13.2A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc) Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V |
auf Bestellung 10036 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7113DN-T1-E3 | Hersteller : VISHAY |
09+ SOP |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7113DN-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 3.5A 8-Pin PowerPAK 1212 T/R |
Produkt ist nicht verfügbar |
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| SI7113DN-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -13.2A; 52W Type of transistor: P-MOSFET Polarisation: unipolar Power dissipation: 52W Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -100V Drain current: -13.2A On-state resistance: 0.145Ω Gate charge: 55nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -20A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7113DN-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -13.2A; 52W Type of transistor: P-MOSFET Polarisation: unipolar Power dissipation: 52W Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -100V Drain current: -13.2A On-state resistance: 0.145Ω Gate charge: 55nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -20A |
Produkt ist nicht verfügbar |