SI7113DN-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 13.2A PPAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
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Technische Details SI7113DN-T1-E3 Vishay Siliconix
Description: MOSFET P-CH 100V 13.2A PPAK, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -50°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8.
Weitere Produktangebote SI7113DN-T1-E3 nach Preis ab 2.04 EUR bis 6.07 EUR
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SI7113DN-T1-E3 | Vishay Semiconductors |
MOSFETs -100V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 94769 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7113DN-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 100V 13.2A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc) Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V |
auf Bestellung 10036 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7113DN-T1-E3 | VISHAY |
09+ SOP |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI7113DN-T1-E3 |
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Hersteller: Vishay Semiconductors
MOSFETs -100V Vds 20V Vgs PowerPAK 1212-8
MOSFETs -100V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 94769 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.1 EUR |
| 10+ | 3.7 EUR |
| 100+ | 2.64 EUR |
| 250+ | 2.53 EUR |
| 500+ | 2.25 EUR |
| 1000+ | 2.09 EUR |
| 3000+ | 2.04 EUR |
| SI7113DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 13.2A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
Description: MOSFET P-CH 100V 13.2A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
auf Bestellung 10036 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.07 EUR |
| 10+ | 3.97 EUR |
| 100+ | 2.77 EUR |
| 500+ | 2.26 EUR |
| 1000+ | 2.1 EUR |
| SI7113DN-T1-E3 |
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Hersteller: VISHAY
09+ SOP
09+ SOP
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)