SI7120DN-T1-GE3
Technische Details Si7120DN-T1-GE3
Description: MOSFET N-CH 60V 6.3A PPAK1212-8, Manufacturer: Vishay Siliconix, Packaging: Cut Tape (CT), Part Status: Obsolete, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V, Mounting Type: Surface Mount, Supplier Device Package: PowerPAK® 1212-8, Package / Case: PowerPAK® 1212-8, Base Part Number: SI7120.
Preis Si7120DN-T1-GE3 ab 0 EUR bis 0 EUR
SI7120DN-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET N-CH 60V 6.3A PPAK1212-8 Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Base Part Number: SI7120 ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SI7120DN-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET N-CH 60V 6.3A 1212-8 Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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