Si7120DN-T1-GE3
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auf Bestellung 25500 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details Si7120DN-T1-GE3
Description: MOSFET N-CH 60V 6.3A 1212-8, Packaging: Cut Tape (CT), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V.
Weitere Produktangebote Si7120DN-T1-GE3
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Si7120DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 6.3A 1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V |
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