SI7137DP-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 20V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 25A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 2.39 EUR |
| 6000+ | 2.3 EUR |
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Technische Details SI7137DP-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 20V 60A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 1.95mOhm @ 25A, 10V, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 10 V.
Weitere Produktangebote SI7137DP-T1-GE3 nach Preis ab 2.46 EUR bis 5.3 EUR
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SI7137DP-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET -20V Vds 12V Vgs PowerPAK SO-8 |
auf Bestellung 21447 Stücke: Lieferzeit 14-28 Tag (e) |
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SI7137DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 60A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 25A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 10 V |
auf Bestellung 11019 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7137DP-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI7137DP-T1-GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 60 A, 0.0016 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 104W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0016ohm |
auf Bestellung 34267 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7137DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 60A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI7137DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -60A; Idm: -100A; 66.6W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -60A Pulsed drain current: -100A Power dissipation: 66.6W Case: PowerPAK® SO8 Gate-source voltage: ±12V On-state resistance: 1.95mΩ Mounting: SMD Gate charge: 585nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7137DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -60A; Idm: -100A; 66.6W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -60A Pulsed drain current: -100A Power dissipation: 66.6W Case: PowerPAK® SO8 Gate-source voltage: ±12V On-state resistance: 1.95mΩ Mounting: SMD Gate charge: 585nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |