SI7148DP-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 75V 28A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 35 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 3.28 EUR |
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Technische Details SI7148DP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 75V 28A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V, Power Dissipation (Max): 5.4W (Ta), 96W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 35 V.
Weitere Produktangebote SI7148DP-T1-GE3 nach Preis ab 2.47 EUR bis 7.85 EUR
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SI7148DP-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 75V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 10408 Stücke: Lieferzeit 14-28 Tag (e) |
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SI7148DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 75V 28A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Power Dissipation (Max): 5.4W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 35 V |
auf Bestellung 5367 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7148DP-T1-GE3 | Hersteller : Vishay |
SI7148DP-T1-GE3 Vishay MOSFETs Transistor N-CH 75V 28A 8-Pin PowerPAK SO T/R - Arrow.com |
auf Bestellung 2999 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7148DP-T1-GE3 | Hersteller : Vishay |
SI7148DP-T1-GE3 Vishay MOSFETs Transistor N-CH 75V 28A 8-Pin PowerPAK SO T/R - Arrow.com |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7148DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 75V 28A 8-Pin PowerPAK SO T/R |
Produkt ist nicht verfügbar |
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| SI7148DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 28A; Idm: 60A; 61W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Power dissipation: 61W Gate charge: 0.1µC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Case: PowerPAK® SO8 Drain-source voltage: 75V Drain current: 28A On-state resistance: 11mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7148DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 28A; Idm: 60A; 61W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Power dissipation: 61W Gate charge: 0.1µC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Case: PowerPAK® SO8 Drain-source voltage: 75V Drain current: 28A On-state resistance: 11mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |