SI7148DP-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 28A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 35 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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Technische Details SI7148DP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 75V 28A PPAK SO-8, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 35 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 5.4W (Ta), 96W (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI7148DP-T1-GE3 nach Preis ab 2.29 EUR bis 5.95 EUR
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SI7148DP-T1-GE3 | Vishay / Siliconix |
MOSFETs 75V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 11258 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7148DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 75V 28A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 35 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 5.4W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 4819 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7148DP-T1-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs 75V Vds 20V Vgs PowerPAK SO-8
MOSFETs 75V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 11258 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.59 EUR |
| 10+ | 2.76 EUR |
| 100+ | 2.29 EUR |
| SI7148DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 28A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 35 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 75V 28A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 35 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 4819 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 5.95 EUR |
| 10+ | 3.9 EUR |
| 100+ | 2.74 EUR |
| 500+ | 2.44 EUR |