SI7390DP-T1-E3
Technische Details SI7390DP-T1-E3
Description: MOSFET N-CH 30V 9A PPAK SO-8, Supplier Device Package: PowerPAK® SO-8, Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 1.8W, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Drain to Source Voltage (Vdss): 30V, FET Type: MOSFET N-Channel, Metal Oxide.
Preis SI7390DP-T1-E3 ab 0 EUR bis 0 EUR
SI7390DP-T1-E3 Hersteller: VISHAY 06PB ![]() |
1983 Stücke |
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SI7390DP-T1-E3 Hersteller: VISHAY ![]() |
1983 Stücke |
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SI7390DP-T1-E3 Hersteller: Vishay Semiconductors MOSFET 30V Vds 20V Vgs PowerPAK SO-8 ![]() |
auf Bestellung 2362 Stücke ![]() Lieferzeit 14-28 Tag (e) |
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SI7390DP-T1-E3 Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 9A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.8W Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide ![]() |
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