SI7414DN-T1-GE3

SI7414DN-T1-GE3

SI7414DN-T1-GE3

Hersteller: Vishay Semiconductors
MOSFET 60V Vds 20V Vgs PowerPAK 1212-8
71738-1765485.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 240 Stücke
Lieferzeit 14-28 Tag (e)

11+ 4.78 EUR
13+ 4.32 EUR
25+ 4.08 EUR
100+ 3.48 EUR

Technische Details SI7414DN-T1-GE3

Description: MOSFET N-CH 60V 5.6A PPAK1212-8, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Rds On (Max) @ Id, Vgs: 25mOhm @ 8.7A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), Drain to Source Voltage (Vdss): 60V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Manufacturer: Vishay Siliconix, Base Part Number: SI7414, Package / Case: PowerPAK® 1212-8, Supplier Device Package: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 1.5W (Ta), Vgs (Max): ±20V.

Preis SI7414DN-T1-GE3 ab 3.48 EUR bis 4.78 EUR

SI7414DN-T1-GE3
Hersteller:

71738.pdf 71738.pdf
25500 Stücke
SI7414DN-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 60V 5.6A 8-Pin PowerPAK 1212 T/R
71738.pdf 71738.pdf
auf Bestellung 15 Stücke
Lieferzeit 14-21 Tag (e)
SI7414DN-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 60V 5.6A 8-Pin PowerPAK 1212 T/R
71738.pdf 71738.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7414DN-T1-GE3
SI7414DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 5.6A PPAK1212-8
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI7414
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
71738.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7414DN-T1-GE3
SI7414DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 5.6A 1212-8
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
71738.pdf
auf Bestellung 16757 Stücke
Lieferzeit 21-28 Tag (e)
SI7414DN-T1-GE3
SI7414DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 5.6A PPAK1212-8
Base Part Number: SI7414
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
71738.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen