SI7456DDP-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 27.8A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 35.7W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 50 V
Description: MOSFET N-CH 100V 27.8A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 35.7W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.15 EUR |
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Technische Details SI7456DDP-T1-GE3 Vishay Siliconix
Description: VISHAY - SI7456DDP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 27.8 A, 0.017 ohm, PowerPAK SO, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 100V, rohsCompliant: YES, Dauer-Drainstrom Id: 27.8A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.5V, euEccn: NLR, Verlustleistung: 35.7W, Bauform - Transistor: PowerPAK SO, Anzahl der Pins: 8Pin(s), Produktpalette: Multicomp Pro RJ45 Adapter, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.017ohm, SVHC: Lead (10-Jun-2022).
Weitere Produktangebote SI7456DDP-T1-GE3 nach Preis ab 1.21 EUR bis 2.64 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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SI7456DDP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 27.8A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 35.7W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 50 V |
auf Bestellung 3172 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7456DDP-T1-GE3 | Hersteller : Vishay Semiconductors | MOSFET 100V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 5667 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7456DDP-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI7456DDP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 27.8 A, 0.017 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 27.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 35.7W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.017ohm SVHC: Lead (10-Jun-2022) |
auf Bestellung 6794 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7456DDP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 27.8A; Idm: 70A; 22.8W Case: PowerPAK® SO8 Drain-source voltage: 100V Drain current: 27.8A On-state resistance: 23mΩ Type of transistor: N-MOSFET Power dissipation: 22.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 29.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A Mounting: SMD Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7456DDP-T1-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 100V 27.8A 8-Pin PowerPAK SO T/R |
Produkt ist nicht verfügbar |
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SI7456DDP-T1-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 100V 27.8A 8-Pin PowerPAK SO T/R |
Produkt ist nicht verfügbar |
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SI7456DDP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 27.8A; Idm: 70A; 22.8W Case: PowerPAK® SO8 Drain-source voltage: 100V Drain current: 27.8A On-state resistance: 23mΩ Type of transistor: N-MOSFET Power dissipation: 22.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 29.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A Mounting: SMD |
Produkt ist nicht verfügbar |