SI7615DN-T1-GE3

SI7615DN-T1-GE3

Hersteller: Vishay
Trans MOSFET P-CH 20V 35A 8-Pin PowerPAK 1212 T/R
SI7615DN.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1035 Stücke
Lieferzeit 14-21 Tag (e)
67+ 2.45 EUR
79+ 1.92 EUR
106+ 1.38 EUR
250+ 1.31 EUR
500+ 1.06 EUR
1000+ 0.88 EUR

Technische Details SI7615DN-T1-GE3

Description: MOSFET P-CH 20V 35A PPAK1212-8, Manufacturer: Vishay Siliconix, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V, Vgs (Max): ±12V, Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PowerPAK® 1212-8, Package / Case: PowerPAK® 1212-8, Base Part Number: SI7615.

Preis SI7615DN-T1-GE3 ab 0.88 EUR bis 2.45 EUR

SI7615DN-T1-GE3
SI7615DN-T1-GE3
Hersteller: Vishay
Trans MOSFET P-CH 20V 35A 8-Pin PowerPAK 1212 T/R
si7615dn.pdf
3000 Stücke
SI7615DN-T1-GE3
Hersteller: Vishay
Trans MOSFET P-CH 20V 35A 8-Pin PowerPAK 1212 T/R
SI7615DN.pdf
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SI7615DN-T1-GE3
SI7615DN-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET RECOMMENDED ALT 78-SI7615ADN-T1-GE3
si7615dn-1764413.pdf
auf Bestellung 1428 Stücke
Lieferzeit 14-28 Tag (e)
SI7615DN-T1-GE3
SI7615DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7615
SI7615DN.pdf
auf Bestellung 2952 Stücke
Lieferzeit 21-28 Tag (e)
SI7615DN-T1-GE3
SI7615DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
SI7615DN.pdf
auf Bestellung 2900 Stücke
Lieferzeit 21-28 Tag (e)
SI7615DN-T1-GE3
SI7615DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7615
SI7615DN.pdf
auf Bestellung 2952 Stücke
Lieferzeit 21-28 Tag (e)