SI7655DN-T1-GE3

SI7655DN-T1-GE3

SI7655DN-T1-GE3

Hersteller: Vishay Semiconductors
MOSFET -20V 3.6mOhm@10V 40A P-Ch G-III
VISH_S_A0002474056_1-2568201.pdf
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auf Bestellung 4643 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SI7655DN-T1-GE3

Description: MOSFET P-CH 20V 40A PPAK1212-8S, Manufacturer: Vishay Siliconix, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V, Vgs (Max): ±12V, Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 10V, Power Dissipation (Max): 4.8W (Ta), 57W (Tc), Operating Temperature: -50°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PowerPAK® 1212-8S, Package / Case: PowerPAK® 1212-8S, Base Part Number: SI7655.

Preis SI7655DN-T1-GE3 ab 0 EUR bis 0 EUR

SI7655DN-T1-GE3
SI7655DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 40A PPAK1212-8S
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Part Number: SI7655
si7655dn.pdf
auf Bestellung 4096 Stücke
Lieferzeit 21-28 Tag (e)
SI7655DN-T1-GE3
SI7655DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 40A PPAK 1212
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
si7655dn.pdf
auf Bestellung 5240 Stücke
Lieferzeit 21-28 Tag (e)
SI7655DN-T1-GE3
SI7655DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 40A PPAK1212-8S
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Part Number: SI7655
si7655dn.pdf
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