SI7655DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 20V 40A PPAK1212-8S
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.10 EUR |
| 6000+ | 1.08 EUR |
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Technische Details SI7655DN-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 20V 40A PPAK1212-8S, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V, Power Dissipation (Max): 4.8W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V.
Weitere Produktangebote SI7655DN-T1-GE3 nach Preis ab 1.15 EUR bis 3.52 EUR
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SI7655DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 40A PPAK1212-8S Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V |
auf Bestellung 17687 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7655DN-T1-GE3 | Hersteller : Vishay Semiconductors |
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SI7655DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 40A 8-Pin PowerPAK 1212 T/R |
Produkt ist nicht verfügbar |
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SI7655DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 40A 8-Pin PowerPAK 1212 T/R |
Produkt ist nicht verfügbar |
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SI7655DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 40A 8-Pin PowerPAK 1212 T/R |
Produkt ist nicht verfügbar |
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| SI7655DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -40A; Idm: -100A Kind of package: reel; tape Drain-source voltage: -20V Drain current: -40A On-state resistance: 8.5mΩ Type of transistor: P-MOSFET Power dissipation: 57W Polarisation: unipolar Gate charge: 225nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -100A Mounting: SMD Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7655DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -40A; Idm: -100A Kind of package: reel; tape Drain-source voltage: -20V Drain current: -40A On-state resistance: 8.5mΩ Type of transistor: P-MOSFET Power dissipation: 57W Polarisation: unipolar Gate charge: 225nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -100A Mounting: SMD |
Produkt ist nicht verfügbar |