SI7738DP-T1-GE3

SI7738DP-T1-GE3

Hersteller:
SI7738DP-T1-GE3 MOSFET N-CH 150V 30A PPAK SO-8
si7738dp.pdf si7738dp.pdf
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Technische Details SI7738DP-T1-GE3

Description: MOSFET N-CH 150V 30A PPAK SO-8, Operating Temperature: -55°C ~ 150°C (TJ), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Power Dissipation (Max): 5.4W (Ta), 96W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 75V, Vgs (Max): ±20V, Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8, Mounting Type: Surface Mount, Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Drain to Source Voltage (Vdss): 150V, Technology: MOSFET (Metal Oxide).

Preis SI7738DP-T1-GE3 ab 0 EUR bis 0 EUR

SI7738DP-T1-GE3
SI7738DP-T1-GE3
Hersteller: Vishay / Siliconix
MOSFET 150V Vds 20V Vgs PowerPAK SO-8
si7738dp-244605.pdf
auf Bestellung 3869 Stücke
Lieferzeit 14-28 Tag (e)
SI7738DP-T1-GE3
SI7738DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 30A PPAK SO-8
Base Part Number: SI7738
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
si7738dp.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SI7738DP-T1-GE3
SI7738DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 30A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 75V
Vgs (Max): ±20V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
si7738dp.pdf
auf Bestellung 7152 Stücke
Lieferzeit 21-28 Tag (e)
SI7738DP-T1-GE3
SI7738DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 30A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V
Base Part Number: SI7738
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
si7738dp.pdf
auf Bestellung 3412 Stücke
Lieferzeit 21-28 Tag (e)