SI7738DP-T1-GE3
SI7738DP-T1-GE3
Hersteller:SI7738DP-T1-GE3 MOSFET N-CH 150V 30A PPAK SO-8
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Technische Details SI7738DP-T1-GE3
Description: MOSFET N-CH 150V 30A PPAK SO-8, Operating Temperature: -55°C ~ 150°C (TJ), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Power Dissipation (Max): 5.4W (Ta), 96W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 75V, Vgs (Max): ±20V, Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8, Mounting Type: Surface Mount, Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Drain to Source Voltage (Vdss): 150V, Technology: MOSFET (Metal Oxide).
Preis SI7738DP-T1-GE3 ab 0 EUR bis 0 EUR
 Hersteller: Vishay / Siliconix MOSFET 150V Vds 20V Vgs PowerPAK SO-8
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auf Bestellung 3869 Stücke  Lieferzeit 14-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 150V 30A PPAK SO-8 Base Part Number: SI7738 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Part Status: Active Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5.4W (Ta), 96W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 75V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 150V Technology: MOSFET (Metal Oxide) FET Type: N-Channel
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auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 150V 30A PPAK SO-8 Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Power Dissipation (Max): 5.4W (Ta), 96W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 75V Vgs (Max): ±20V Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 150V Technology: MOSFET (Metal Oxide)
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auf Bestellung 7152 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 150V 30A PPAK SO-8 Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5.4W (Ta), 96W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 75V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V Base Part Number: SI7738 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 150V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT)
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auf Bestellung 3412 Stücke Lieferzeit 21-28 Tag (e) |
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