SI7884BDP-T1-GE3

SI7884BDP-T1-GE3

SI7884BDP-T1-GE3

Hersteller: Vishay
Trans MOSFET N-CH 40V 58A 8-Pin PowerPAK SO T/R
si7884bd.pdf
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Technische Details SI7884BDP-T1-GE3

Description: MOSFET N-CH 40V 58A PPAK SO-8, Packaging: Tape & Reel (TR), Manufacturer: Vishay Siliconix, Base Part Number: SI7884, Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 4.6W (Ta), 46W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 20V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Drain to Source Voltage (Vdss): 40V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active.

Preis SI7884BDP-T1-GE3 ab 0 EUR bis 0 EUR

SI7884BDP-T1-GE3
Hersteller:
SI7884BDP MOSFET N-CH 40V 58A PPAK SO-8
si7884bd.pdf si7884bd.pdf
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SI7884BDP-T1-GE3
SI7884BDP-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 40V 58A 46W 7.5mohm @ 10V
si7884bd-1765275.pdf
auf Bestellung 15000 Stücke
Lieferzeit 14-28 Tag (e)
SI7884BDP-T1-GE3
SI7884BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI7884
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
si7884bd.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7884BDP-T1-GE3
SI7884BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI7884
Package / Case: PowerPAK® SO-8
si7884bd.pdf
auf Bestellung 1579 Stücke
Lieferzeit 21-28 Tag (e)
SI7884BDP-T1-GE3
SI7884BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
si7884bd.pdf
auf Bestellung 5604 Stücke
Lieferzeit 21-28 Tag (e)