SI7884BDP-T1-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Technische Details SI7884BDP-T1-GE3
Description: MOSFET N-CH 40V 58A PPAK SO-8, Packaging: Tape & Reel (TR), Manufacturer: Vishay Siliconix, Base Part Number: SI7884, Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 4.6W (Ta), 46W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 20V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Drain to Source Voltage (Vdss): 40V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active.
Preis SI7884BDP-T1-GE3 ab 0 EUR bis 0 EUR
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SI7884BDP-T1-GE3 Hersteller: SI7884BDP MOSFET N-CH 40V 58A PPAK SO-8 
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: Vishay Semiconductors MOSFET 40V 58A 46W 7.5mohm @ 10V
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auf Bestellung 15000 Stücke  Lieferzeit 14-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 40V 58A PPAK SO-8 Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SI7884 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 4.6W (Ta), 46W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 20V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 40V 58A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 4.6W (Ta), 46W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 20V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Base Part Number: SI7884 Package / Case: PowerPAK® SO-8
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auf Bestellung 1579 Stücke Lieferzeit 21-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 40V 58A PPAK SO-8 Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 4.6W (Ta), 46W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 20V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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auf Bestellung 5604 Stücke Lieferzeit 21-28 Tag (e) |
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