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SI7884BDP-T1-GE3

SI7884BDP-T1-GE3 Vishay Siliconix


si7884bd.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V
auf Bestellung 12000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+2.08 EUR
6000+ 2 EUR
9000+ 1.94 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details SI7884BDP-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 40V 58A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V, Power Dissipation (Max): 4.6W (Ta), 46W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V.

Weitere Produktangebote SI7884BDP-T1-GE3 nach Preis ab 0.98 EUR bis 4.65 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SI7884BDP-T1-GE3 SI7884BDP-T1-GE3 Hersteller : Vishay si7884bd.pdf Trans MOSFET N-CH 40V 58A 8-Pin PowerPAK SO T/R
auf Bestellung 2781 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
54+2.91 EUR
64+ 2.35 EUR
65+ 2.24 EUR
100+ 1.74 EUR
250+ 1.65 EUR
500+ 1.36 EUR
1000+ 0.98 EUR
Mindestbestellmenge: 54
SI7884BDP-T1-GE3 SI7884BDP-T1-GE3 Hersteller : Vishay si7884bd.pdf Trans MOSFET N-CH 40V 58A 8-Pin PowerPAK SO T/R
auf Bestellung 2781 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
54+2.91 EUR
64+ 2.35 EUR
65+ 2.24 EUR
100+ 1.74 EUR
250+ 1.65 EUR
500+ 1.36 EUR
1000+ 0.98 EUR
Mindestbestellmenge: 54
SI7884BDP-T1-GE3 SI7884BDP-T1-GE3 Hersteller : Vishay Siliconix si7884bd.pdf Description: MOSFET N-CH 40V 58A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V
auf Bestellung 12954 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.6 EUR
10+ 3.84 EUR
100+ 3.05 EUR
500+ 2.58 EUR
1000+ 2.19 EUR
Mindestbestellmenge: 6
SI7884BDP-T1-GE3 SI7884BDP-T1-GE3 Hersteller : Vishay Semiconductors si7884bd.pdf MOSFET 40V 58A 46W 7.5mohm @ 10V
auf Bestellung 5569 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
12+4.65 EUR
14+ 3.87 EUR
100+ 3.09 EUR
500+ 2.99 EUR
Mindestbestellmenge: 12
SI7884BDP-T1-GE3 SI7884BDP-T1-GE3 Hersteller : Vishay si7884bd.pdf Trans MOSFET N-CH 40V 58A 8-Pin PowerPAK SO T/R
Produkt ist nicht verfügbar
SI7884BDP-T1-GE3 SI7884BDP-T1-GE3 Hersteller : Vishay si7884bd.pdf Trans MOSFET N-CH 40V 58A 8-Pin PowerPAK SO T/R
Produkt ist nicht verfügbar
SI7884BDP-T1-GE3 Hersteller : VISHAY si7884bd.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 58A; Idm: 50A; 46W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58A
Pulsed drain current: 50A
Power dissipation: 46W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7884BDP-T1-GE3 Hersteller : VISHAY si7884bd.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 58A; Idm: 50A; 46W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58A
Pulsed drain current: 50A
Power dissipation: 46W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar