Produktrezensionen
Produktbewertung abgeben
Technische Details SI7884BDP-T1-GE3 Vishay
Description: MOSFET N-CH 40V 58A PPAK SO-8, Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 4.6W (Ta), 46W (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI7884BDP-T1-GE3 nach Preis ab 1.15 EUR bis 5.81 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SI7884BDP-T1-GE3 | Vishay |
 Trans MOSFET N-CH 40V 58A 8-Pin PowerPAK SO T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
SI7884BDP-T1-GE3 | Vishay |
Trans MOSFET N-CH 40V 58A 8-Pin PowerPAK SO T/R |
auf Bestellung 1178 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
SI7884BDP-T1-GE3 | Vishay |
Trans MOSFET N-CH 40V 58A 8-Pin PowerPAK SO T/R |
auf Bestellung 1178 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
SI7884BDP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 58A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 4.6W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
SI7884BDP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 58A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 4.6W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 6043 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
SI7884BDP-T1-GE3 | Vishay Semiconductors |
MOSFETs 40V 58A 46W 7.5mohm @ 10V |
auf Bestellung 5483 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI7884BDP-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 40V 58A 8-Pin PowerPAK SO T/R
Trans MOSFET N-CH 40V 58A 8-Pin PowerPAK SO T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.46 EUR |
| SI7884BDP-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 40V 58A 8-Pin PowerPAK SO T/R
Trans MOSFET N-CH 40V 58A 8-Pin PowerPAK SO T/R
auf Bestellung 1178 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 115+ | 1.54 EUR |
| 119+ | 1.37 EUR |
| 120+ | 1.32 EUR |
| 250+ | 1.26 EUR |
| 500+ | 1.21 EUR |
| 1000+ | 1.15 EUR |
| SI7884BDP-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 40V 58A 8-Pin PowerPAK SO T/R
Trans MOSFET N-CH 40V 58A 8-Pin PowerPAK SO T/R
auf Bestellung 1178 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 115+ | 1.54 EUR |
| 119+ | 1.43 EUR |
| 120+ | 1.39 EUR |
| 250+ | 1.37 EUR |
| 500+ | 1.34 EUR |
| 1000+ | 1.32 EUR |
| SI7884BDP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 58A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 2.42 EUR |
| SI7884BDP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 58A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 6043 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.14 EUR |
| 10+ | 2.96 EUR |
| SI7884BDP-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 40V 58A 46W 7.5mohm @ 10V
MOSFETs 40V 58A 46W 7.5mohm @ 10V
auf Bestellung 5483 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.81 EUR |
| 10+ | 3.42 EUR |
| 100+ | 2.57 EUR |
| 500+ | 2.15 EUR |
| 1000+ | 2.09 EUR |
| 3000+ | 1.96 EUR |