SI7901EDN-T1-E3
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Technische Details SI7901EDN-T1-E3
Description: MOSFET 2P-CH 20V 4.3A PPAK 1212, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8 Dual, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.3A, Rds On (Max) @ Id, Vgs: 48mOhm @ 6.3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 800µA, Supplier Device Package: PowerPAK® 1212-8 Dual.
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SI7901EDN-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 20V 4.3A PPAK 1212 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 48mOhm @ 6.3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 800µA Supplier Device Package: PowerPAK® 1212-8 Dual |
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